Name
Title | ||
|---|---|---|
Self-triggered stacked silicon-controlled rectifier structure (STSSCR) for on-chip electrostatic discharge (ESD) protection. |
Abstract | ||
|---|---|---|
In order to improve the holding voltage and keep the trigger voltage of the silicon controlled rectifier (SCR) devices, a new self-triggered stacked SCR structure (STSSCR) is proposed for on–chip electrostatic discharge (ESD) protection. The STSSCR structure consists of a modified lateral SCR (MLSCR) and multiple double trigger SCRs (DTSCRs). The trigger voltage of the structure is decided by the trigger voltage of the MLSCR. And the holding voltage is decided by the holding voltage of the SCRs and the number of the DTSCR in the STSSCR structure. The simulation and experimental results show that STSSCR has a stable trigger voltage, a small trigger current and an adjustable high holding voltage. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1016/j.microrel.2016.11.014 | Microelectronics Reliability |
Keywords | Field | DocType |
Electrostatic discharge (ESD) protection,Stacked silicon-controlled rectifier (SSCR),Holding voltage | Rectifier,Electrostatic discharge,Voltage,CMOS,Optoelectronics,Materials science,Silicon-controlled rectifier | Journal |
Volume | ISSN | Citations |
71 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 0 | 6 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Jizhi Liu | 1 | 0 | 0.68 |
| Qian Lingli | 2 | 0 | 0.34 |
| Tian Rui | 3 | 0 | 0.34 |
| Zhiwei Liu | 4 | 16 | 6.66 |
| Zhao Liu | 5 | 25 | 10.73 |
| Cheng Hui | 6 | 0 | 0.68 |