Name
Abstract | ||
|---|---|---|
This paper introduces a hybrid charge pump (HCP) architecture. The HCP enables high-voltage dc outputs in a nanometer-scale CMOS technology at improved power efficiency by optimally mixing different charge pump (CP) types that trade off voltage range and power efficiency. Conventional CP outputs in a bulk CMOS process are limited to a single-diode breakdown voltage (~12 V in a 65-nm technology nod... |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/JSSC.2016.2636876 | IEEE Journal of Solid-State Circuits |
Keywords | Field | DocType |
Substrates,CMOS technology,Breakdown voltage,Switches,MOS devices,Switching circuits,Transistors | Electrical efficiency,Computer science,Voltage,Voltage doubler,Electronic engineering,CMOS,Breakdown voltage,Science, technology and society,Charge pump,Electrical engineering,Imagination | Journal |
Volume | Issue | ISSN |
52 | 3 | 0018-9200 |
Citations | PageRank | References |
7 | 0.76 | 10 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yousr Ismail | 1 | 7 | 0.76 |
| Haechang Lee | 2 | 70 | 11.50 |
| Sudhakar Pamarti | 3 | 366 | 55.68 |
| Chih-Kong Ken Yang | 4 | 527 | 128.86 |