Name
Title | ||
|---|---|---|
A 3T1R Nonvolatile TCAM Using MLC ReRAM for Frequent-Off Instant-On Filters in IoT and Big-Data Processing. |
Abstract | ||
|---|---|---|
Existing nonvolatile ternary content-addressable-memory (nvTCAM) suffers from limited word-length (WDL), large write-energy (EW) and search-energy (ES), and large cell area (A). This paper develops a 3T1R nvTCAM cell using a single multiple-level cell (MLC)-resistive RAM (ReRAM) device to achieve long WDL, lower EW and ES, and reduced cell area. Two peripheral control schemes were developed, dual-... |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/JSSC.2017.2681458 | IEEE Journal of Solid-State Circuits |
Keywords | Field | DocType |
Nonvolatile memory,Transistors,Power demand,Resistive RAM,Delays,Logic gates,Servers | Big data processing,Content-addressable memory,Computer science,Voltage,Internet of Things,Ternary operation,Cmos process,Electronic engineering,Resistive random-access memory,Power consumption | Journal |
Volume | Issue | ISSN |
52 | 6 | 0018-9200 |
Citations | PageRank | References |
4 | 0.40 | 11 |
Authors | ||
9 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Meng-Fan Chang | 1 | 459 | 45.63 |
| Chien-Chen Lin | 2 | 59 | 4.53 |
| Albert Lee | 3 | 62 | 8.49 |
| Yen-Ning Chiang | 4 | 13 | 1.93 |
| Chia-Chen Kuo | 5 | 187 | 20.28 |
| Geng-Hau Yang | 6 | 45 | 3.38 |
| Hsiang-Jen Tsai | 7 | 25 | 3.17 |
| Tien-Fu Chen | 8 | 4 | 1.41 |
| Shyh-Shyuan Sheu | 9 | 211 | 23.45 |