Name
Title | ||
|---|---|---|
Boosting the Performance of 3D Charge Trap NAND Flash with Asymmetric Feature Process Size Characteristic. |
Abstract | ||
|---|---|---|
The growing demands of large capacity fash-based storages have facilitated the down-scaling process of NAND fash memory. Among NAND fash technologies, 3D charge trap fash is regarded as one of the most promising candidates. Owing to the cylindrical geometry of vertical channels, the access performance of each page in one block is distinctive, and this situation is exaggerated in the 3D charge trap fash with the fast-growing number of layers. In this study, a progressive performance boosting strategy is proposed to boost the performance of 3D charge trap fash by utilizing its asymmetric page access speed feature. A series of experiments was conducted to demonstrate the capability of the proposed strategy on improving access performance of 3D charge trap flash. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1145/3061639.3062209 | DAC |
Keywords | Field | DocType |
3D NAND flash, flash storage, hot/cold identification | Nand flash memory,Logic gate,Computer science,Communication channel,Cylindrical geometry,Electronic engineering,NAND gate,Non-volatile memory,Boosting (machine learning),Charge trap flash | Conference |
ISSN | Citations | PageRank |
0738-100X | 0 | 0.34 |
References | Authors | |
6 | 4 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Shuo-Han Chen | 1 | 38 | 16.08 |
| Yen-ting Chen | 2 | 162 | 18.83 |
| Hsin-Wen Wei | 3 | 222 | 30.39 |
| Wei-Kuan Shih | 4 | 938 | 98.21 |