Name
Abstract | ||
|---|---|---|
With development of semiconductor fabrication technology, channel length of CMOS device and device pitch scale down accompanied by more severe process variation and signal coupling effect. In this paper, we focus on the decouple latch type voltage sense amplifier which is widely used in SRAM product. Two main signal coupling effects are introduced and analyzed, and improved design is suggested. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1109/ISICIR.2016.7829751 | 2016 International Symposium on Integrated Circuits (ISIC) |
Keywords | Field | DocType |
signal coupling,process variation,sense amplifier | Sense amplifier,Logic gate,Coupling,Static random-access memory,CMOS,Electronic engineering,Process variation,Engineering,Electrical engineering,Sense (electronics),Amplifier | Conference |
ISSN | ISBN | Citations |
2325-0631 | 978-1-4673-9020-0 | 0 |
PageRank | References | Authors |
0.34 | 0 | 6 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yiping Zhang | 1 | 1 | 0.69 |
| Ziou Wang | 2 | 91 | 9.82 |
| Canyan Zhu | 3 | 12 | 3.97 |
| Zhang, L. | 4 | 5 | 5.85 |
| Aiming Ji | 5 | 0 | 0.34 |
| Lingfeng Mao | 6 | 7 | 4.59 |