Name
Abstract | ||
|---|---|---|
The growing demand for battery-powered mobile devices is the major driver to keep pushing power and area scaling for SoCs. This year, the SRAM session is headlined by the most advanced 7nm SRAM designs from both TSMC and Samsung. A novel dual-rail low-power SRAM design in 10nm from TSMC, and a two-phase-precharge ML sensing TCAM design from Globalfoundries in 14nm, are demonstrated. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/ISSCC.2017.7870332 | 2017 IEEE International Solid-State Circuits Conference (ISSCC) |
Field | DocType | ISBN |
Content-addressable memory,Computer science,Static random-access memory,Mobile device,Embedded system | Conference | 978-1-5090-3759-9 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Fatih Hamzaoglu | 1 | 200 | 52.96 |
| Chun Shiah | 2 | 1 | 1.71 |
| Leland Chang | 3 | 5 | 2.12 |