11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology

Paper Info

Title
11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology

Abstract
High floating-gate (FG) to FG coupling and lithography limitations have been preventing 2D-NAND flash from further reduction in die size, (e.g., there is no ISSCC paper discussing a 3b/cell 2D-NAND after 2013). Alternatively, since high-density multi-stacked 3D-flash was first introduced as BiCS flash, recent dramatic innovations in 3D-flash technologies are rapidly boosting bit density by increasing the number of stacked layers. The first 3b/cell 3D-flash used 32 layers in 2015, and reached 48 layers in 2016. Also, density as high as 2.62 and 4.29Gb/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> were achieved, as shown in Fig. 11.1.7. This rapid scaling of 3D-flash technologies is possible since it is free from the lithography limitation mentioned above. This paper describes a 512Gbit 3b/cell flash fabricated with a 64-word-line-layer BiCS technology. In this work, we implemented three technologies: four-block even-odd-combined row decoding to effectively address the increase of stacked layers; unselected string pre-charge operation to improve endurance and reliability, and; shielded BL current sensing to enhance read throughput. Figure 11.1.1 shows the die photo and the summary of key features.

Year	DOI	Venue
2017	10.1109/ISSCC.2017.7870328	2017 IEEE International Solid-State Circuits Conference (ISSCC)
Keywords	Field	DocType
64-word-line-layer BiCS technology,floating-gate,FG,lithography,2D-NAND flash memory,ISSCC,high-density multistacked 3D-flash memory,four-block even-odd-combined row decoding,reliability,shielded BL current sensing,storage capacity 512 Gbit,storage capacity 3 bit	Shielded cable,Logic gate,Coupling,Flash memory,Computer science,Electronic engineering,Lithography,Throughput,Decoding methods,Scaling,Electrical engineering	Conference
ISBN	Citations	PageRank
978-1-5090-3759-9	2	0.38
References	Authors
5	57

Authors (57 rows)

Cited by (2 rows)

References (5 rows)

Name	Order	Citations	PageRank
Ryuji Yamashita	1	2	0.38
Sagar Magia	2	2	0.38
Tsutomu Higuchi	3	2	0.38
Kazuhide Yoneya	4	2	0.38
Toshio Yamamura	5	2	0.38
Hiroyuki Mizukoshi	6	2	0.38
Shingo Zaitsu	7	4	1.16
minoru yamashita	8	2	1.40
Shunichi Toyama	9	2	0.38
Norihiro Kamae	10	2	0.38
Juan Lee	11	2	0.38
Shuo Chen	12	3	0.73
Jiawei Tao	13	2	0.38
William Mak	14	6	1.07
Xiaohua Zhang	15	2	0.38
Ying Yu	16	58	8.88
Yuko Utsunomiya	17	4	1.16
Yosuke Kato	18	2	0.38
Manabu Sakai	19	2	0.38
Masahide Matsumoto	20	2	0.38
Hardwell Chibvongodze	21	2	0.38
Naoki Ookuma	22	4	1.16
Hiroki Yabe	23	2	0.38
Subodh Taigor	24	2	0.38
Rangarao Samineni	25	2	0.38
Takuyo Kodama	26	2	0.38
Yoshihiko Kamata	27	2	0.38
Yuzuru Namai	28	2	0.38
Jonathan Huynh	29	10	1.85
Sung-En Wang	30	2	0.38
Yankang He	31	2	0.38
Trung Pham	32	2	0.38
Vivek Saraf	33	2	0.38
Akshay Petkar	34	2	0.38
Mitsuyuki Watanabe	35	16	3.73
Koichiro Hayashi	36	2	0.38
Prashant Swarnkar	37	2	0.38
Hitoshi Miwa	38	2	0.38
Aditya Pradhan	39	2	0.38
Sulagna Dey	40	2	0.38
Debasish Dwibedy	41	2	0.38
Thushara Xavier	42	2	0.38
Muralikrishna Balaga	43	2	0.38
Samiksha Agarwal	44	2	0.38
Swaroop Kulkarni	45	2	0.38
Zameer Papasaheb	46	2	0.38
Sahil Deora	47	2	0.38
Patrick Hong	48	10	1.85
Meiling Wei	49	2	0.38
Gopinath Balakrishnan	50	2	0.38