Name
Abstract | ||
|---|---|---|
The state-of-the-art solid-state drives (SSDs) now heterogeneously integrate NAND Flash and dynamic random access memories (DRAMs) to partially hide the limitation of the nonvolatile memory technology. However, due to the increased request for storage density coupled with performance that positions the storage tier closer to the latency of the processing elements, NAND Flash are becoming a serious... |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/JPROC.2017.2710217 | Proceedings of the IEEE |
Keywords | DocType | Volume |
Phase change materials,Random access memory,Flash memories,Programming,Solid-state circuits,Magnetic memory,Nonvolatile memory,Drives,Solid-state circuits | Journal | 105 |
Issue | ISSN | Citations |
9 | 0018-9219 | 0 |
PageRank | References | Authors |
0.34 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Cristian Zambelli | 1 | 36 | 9.05 |
| Gabriele Navarro | 2 | 1 | 1.79 |
| Veronique Sousa | 3 | 0 | 0.68 |
| Ioan Lucian Prejbeanu | 4 | 0 | 0.34 |
| L. Perniola | 5 | 4 | 3.31 |