Title
An Ultra-Low-Power Dual-Polarization Transceiver Front-End for 94-GHz Phased Arrays in 130-nm InP HBT.
Abstract
We present a fully integrated 94-GHz transceiver front-end in a 130-nm/1.1-THz fmax InP HBT process. Low power is obtained through low-voltage design and high transistor gain. The IC is designed for multi-function, dual-polarization phased arrays. At 1.5-V collector bias, in dual-polarization simultaneous receiving mode, the IC has 21-dB gain, <;9.3-dB noise figure, and consumes 39 mW, while in tr...
Year
DOI
Venue
2017
10.1109/JSSC.2017.2713528
IEEE Journal of Solid-State Circuits
Keywords
Field
DocType
Integrated circuits,Heterojunction bipolar transistors,Gain,Transceivers,Mirrors,Indium phosphide,III-V semiconductor materials
Front and back ends,Transceiver,Computer science,Noise figure,Electronic engineering,Transistor,Heterojunction bipolar transistor,Dual-polarization interferometry,Integrated circuit,Indium phosphide
Journal
Volume
Issue
ISSN
52
9
0018-9200
Citations 
PageRank 
References 
0
0.34
2
Authors
5
Name
Order
Citations
PageRank
Seong-Kyun Kim101.69
Robert Maurer200.34
Arda Simsek301.01
M. Urteaga4167.43
Mark J. W. Rodwell522329.72