Title
A 60 GHz wideband Variable Gain Amplifier in 130nm SiGe BiCMOS for dielectric spectroscopy
Abstract
This paper presents the design, implementation, layout and measured results of a single stage 60 GHz Variable Gain Amplifier (VGA). The VGA has been implemented in 0.13 µm SiGe BiCMOS technology with f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</inf> /f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> = 250/340 GHz. It provides a tunable gain of −15 to 7 dB. The circuit consumes 32.25 mW of power from 2.5 V supply. It occupies an area of 0.6 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and it is intended to be deployed in miniaturized dielectric sensing applications.
Year
DOI
Venue
2017
10.1109/NEWCAS.2017.8010161
2017 15th IEEE International New Circuits and Systems Conference (NEWCAS)
Keywords
Field
DocType
wideband variable gain amplifier,VGA,dielectric spectroscopy,BiCMOS technology,tunable gain,dielectric sensing applications,frequency 60 GHz,size 130 nm,power 32.25 mW,voltage 2.5 V,size 0.6 mm,SiGe
Wideband,Variable-gain amplifier,BiCMOS,Dielectric,Computer science,Electronic engineering,Dielectric spectroscopy,Transistor,Electrical engineering,Video Graphics Array,Silicon-germanium
Conference
ISSN
ISBN
Citations 
2472-467X
978-1-5090-4992-9
0
PageRank 
References 
Authors
0.34
0
5
Name
Order
Citations
PageRank
Rahul Kumar Yadav100.68
Farabi Ibne Jamal201.01
Mohamed Eissa300.34
Jan Wessel402.37
Dietmar Kissinger54018.10