Title | ||
---|---|---|
A 60 GHz wideband Variable Gain Amplifier in 130nm SiGe BiCMOS for dielectric spectroscopy |
Abstract | ||
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This paper presents the design, implementation, layout and measured results of a single stage 60 GHz Variable Gain Amplifier (VGA). The VGA has been implemented in 0.13 µm SiGe BiCMOS technology with f
<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</inf>
/f
<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf>
= 250/340 GHz. It provides a tunable gain of −15 to 7 dB. The circuit consumes 32.25 mW of power from 2.5 V supply. It occupies an area of 0.6 mm
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>
and it is intended to be deployed in miniaturized dielectric sensing applications. |
Year | DOI | Venue |
---|---|---|
2017 | 10.1109/NEWCAS.2017.8010161 | 2017 15th IEEE International New Circuits and Systems Conference (NEWCAS) |
Keywords | Field | DocType |
wideband variable gain amplifier,VGA,dielectric spectroscopy,BiCMOS technology,tunable gain,dielectric sensing applications,frequency 60 GHz,size 130 nm,power 32.25 mW,voltage 2.5 V,size 0.6 mm,SiGe | Wideband,Variable-gain amplifier,BiCMOS,Dielectric,Computer science,Electronic engineering,Dielectric spectroscopy,Transistor,Electrical engineering,Video Graphics Array,Silicon-germanium | Conference |
ISSN | ISBN | Citations |
2472-467X | 978-1-5090-4992-9 | 0 |
PageRank | References | Authors |
0.34 | 0 | 5 |
Name | Order | Citations | PageRank |
---|---|---|---|
Rahul Kumar Yadav | 1 | 0 | 0.68 |
Farabi Ibne Jamal | 2 | 0 | 1.01 |
Mohamed Eissa | 3 | 0 | 0.34 |
Jan Wessel | 4 | 0 | 2.37 |
Dietmar Kissinger | 5 | 40 | 18.10 |