Name
Abstract | ||
|---|---|---|
This paper proposes a redundant sense amplifier for radiation-hardened SRAMs, based on a latched cross-coupled topology. First, the most common issues related to SRAMs reliability and performances in radiation environments are discussed. Then, after an analytical study on the transient effects induced by radiations, based on a systematic design flow, a novel redundant sensing scheme is presented and discussed. Simulation results, carried out in a standard 130-nm CMOS, demonstrate the effectiveness of the solution. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/NGCAS.2017.18 | 2017 New Generation of CAS (NGCAS) |
Keywords | Field | DocType |
SRAM,readout circuits,Radiation-Hardeninh-By-Design | Sense amplifier,Static random-access memory,Design flow,CMOS,Electronic engineering,Engineering,Electrical engineering,Radiation | Conference |
ISBN | Citations | PageRank |
978-1-5090-6448-9 | 0 | 0.34 |
References | Authors | |
0 | 3 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Nicola Lupo | 1 | 1 | 1.16 |
| Edoardo Bonizzoni | 2 | 162 | 47.30 |
| Franco Maloberti | 3 | 686 | 144.70 |