Name
Abstract | ||
|---|---|---|
A nano-ampere current reference with temperature compensation operating is presented. The reference current is generated biasing a zero-VT transistor near its Zero-temperature coefficient (ZTC) point. Two versions were implemented in a 180 nm CMOS process. Both are designed using the same thermal compensation principle, but the second version uses an auxiliary circuit to compensate process variation. The circuits occupy 0.01 and 0.018 mm2 of silicon area while consuming around 30.5 and 122 nW at 27° C, respectively. Post-layout simulations present a reference current of 10.86 and 10.95 nA with a average temperature coefficient of 108 and 127 ppm/°C (100 Samples), under a temperature range from -20 to 120 °C, and a line sensitivity of 0.54 and 0.86 %/V at 0.9 V to 1.8 V of supply voltage, respectively. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/ISCAS.2017.8050289 | 2017 IEEE International Symposium on Circuits and Systems (ISCAS) |
Keywords | Field | DocType |
Low-voltage,low-power,voltage reference,current reference,zero-VT transistor,ZTC Point | Atmospheric temperature range,Computer science,Voltage,Temperature coefficient,Electronic engineering,Transistor,Electronic circuit,Threshold voltage,Bandgap voltage reference,Biasing | Conference |
ISSN | ISBN | Citations |
0271-4302 | 978-1-5090-1427-9 | 0 |
PageRank | References | Authors |
0.34 | 5 | 6 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| David Cordova | 1 | 22 | 6.09 |
| arthur c de oliveira | 2 | 19 | 3.15 |
| Pedro Toledo | 3 | 9 | 4.47 |
| hamilton klimach | 4 | 71 | 20.07 |
| sergio bampi | 5 | 496 | 102.12 |
| Eric E. Fabris | 6 | 19 | 11.33 |