Name
Title | ||
|---|---|---|
A High-Power Multi-Port 0.46thz Radiation Source In Nano-Scale Silicon Technology Using Fundamental-Frequency Oscillation Beyond F(Max)Of Transistors |
Abstract | ||
|---|---|---|
A silicon-integrated vertical IMPATT (V-IMPATT) diode is introduced and its implementation in a silicon-germanium (SiGe) BiC-MOS process is presented. The device exhibits active behavior and negative resistance at > 400GHz, far above the f(MAX) of transistors in that technology node. Furthermore, it provides much higher output power compared to transistor-based harmonic power generation thanks to operation in breakdown region with much larger allowable voltage swing compared to transistors. As a result, using this device, generation of high oscillation power is enabled in nano-scale silicon process. In addition, a four-port on-chip cavity-backed antenna structure, as a multi-port resonator, power-combiner, and antenna is vertically integrated with four V-IMPATT devices to build a silicon-integrated 0.46THz radiation source, demonstrating 10.5dBm total radiated power and 18.5dBm EIRP. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1145/3109453.3122843 | PROCEEDINGS OF THE 4TH ACM INTERNATIONAL CONFERENCE ON NANOSCALE COMPUTING AND COMMUNICATION (ACM NANOCOM 2017) |
Keywords | Field | DocType |
Terahertz Radiation, Silicon, Integrated Circuits, IMPATT, On-chip Cavity | Computer science,Diode,Resonator,Negative resistance,Harmonic,Electronic engineering,Transistor,Electrical engineering,Optoelectronics,Integrated circuit,Effective radiated power,Electricity generation | Conference |
Citations | PageRank | References |
0 | 0.34 | 8 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Peyman Nazari | 1 | 0 | 0.34 |
| Zheng Wang | 2 | 0 | 0.34 |
| Payam Heydari | 3 | 649 | 75.49 |