Paper Info
Title
Compact modeling of high spin transfer torque efficiency double-barrier magnetic tunnel junction
Abstract
The considerable power consumption on logic and memory circuit system will be an unavoidable bottleneck with the shrinking of complementary metal oxide semiconductor (CMOS) technology size. One promising solution is to build non-volatile spintronic device, e.g. spin transfer torque magnetic random access memory (STT-MRAM). The basic storage unit of STT-MRAM, i.e. magnetic tunnel junction (MTJ), has thus been extensively studied. Double-barrier MTJ (DMTJ), as an optimized structure, enhances the STT effect with a second MgO barrier layer and reduces its critical switching current. In this paper, we present a physics-based compact model of CoFeB/MgO DMTJ with perpendicular magnetic anisotropy (PMA). The modeling results show a great agreement with experimental results. More efficient STT switching and similar magnetoresistance features compared with single-barrier MTJ (SMTJ) can be realized. Mixed circuits simulations have also been carried out to validate its functionality. This SPICE-compatible compact model will be useful for high-performance hybrid DMTJ/CMOS circuit and system designs.
Year
DOI
Venue
2017
10.1109/NANOARCH.2017.8053705
2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)
Keywords
Field
DocType
Compact modeling,Spin-Transfer-Torque,Double-barrier Magnetic Tunnel Junction,Critical switching current
Computer science,Spintronics,Electronic engineering,Barrier layer,CMOS,Magnetoresistance,Spin-transfer torque,Tunnel magnetoresistance,Electronic circuit,Random access
Conference
ISSN
ISBN
Citations 
2327-8218
978-1-5090-6038-2
0
PageRank 
References 
Authors
0.34
2
9
Name
Order
Citations
PageRank
Guanda Wang1103.68
Yue Zhang224926.23
Zhizhong Zhang363.98
Jiang Nan4101.76
Zhenyi Zheng561.78
Yu Wang62279211.60
Lang Zeng7184.67
Youguang Zhang8217.75
Weisheng Zhao9730105.43