Name
Abstract | ||
|---|---|---|
In this work, novel magnetic memory device is proposed based on fascinating Spin Momentum Locking (SML) materials. The device utilizes direct spin current to charge current conversion and don't need Magnetic Tunneling Junction (MTJ) structure. The NOR, NAND and 3D array structure of the proposed magnetic memory device are demonstrated and discussed. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/NANOARCH.2017.8053717 | 2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH) |
Keywords | Field | DocType |
magnetic memory device,3D array structure,NAND,NOR,magnetic tunneling junction structure,spin momentum locking materials | Quantum tunnelling,Array data structure,Spin-½,Torque,Electronic engineering,NAND gate,Topological insulator,Momentum,Spin-transfer torque,Condensed matter physics,Physics | Conference |
ISSN | ISBN | Citations |
2327-8218 | 978-1-5090-6038-2 | 0 |
PageRank | References | Authors |
0.34 | 0 | 7 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Xiaowan Qin | 1 | 0 | 0.68 |
| Lang Zeng | 2 | 18 | 4.67 |
| Tianqi Gao | 3 | 5 | 3.56 |
| De-ming Zhang | 4 | 19 | 4.81 |
| Mingzhi Long | 5 | 0 | 0.68 |
| Youguang Zhang | 6 | 21 | 7.75 |
| Weisheng Zhao | 7 | 730 | 105.43 |