Paper Info
Title
Transformation techniques applied to a TaO memristor model to enable stable device simulations
Abstract
Given the complexity of the mathematical descriptions of real nanodevices with memristor fingerprints, convergence issues often emerge in the simulation of circuits employing memristors, even for a limited number of instances. Actually the simulation of one-memristor circuits may also be troublesome for some inputs and/or initial conditions. This problem prevents a thorough test of memristor circuit designs, representing a severe obstacle towards an extensive use of memristors in electronics. In this work we propose techniques to transform a highly-reliable physics-based model of the Tantalum oxide memristor from Hewlett Packard Labs in a form which lends itself naturally to stable numerical simulations. The results of this study shall pave the way towards a more extensive exploration of the full potential of memristors in integrated circuit design.
Year
DOI
Venue
2017
10.1109/ECCTD.2017.8093286
2017 European Conference on Circuit Theory and Design (ECCTD)
Keywords
Field
DocType
transformation techniques,TaO memristor model,device simulations,nanodevices,memristor fingerprints,memristor circuit designs,tantalum oxide memristor,Hewlett Packard Labs,numerical simulations,integrated circuit design
Convergence (routing),Memristor,Computer simulation,Computer science,Electronic engineering,Electronics,Kinetic theory,Integrated circuit design,Tantalum oxide,Electronic circuit
Conference
ISBN
Citations 
PageRank 
978-1-5386-3975-7
0
0.34
References 
Authors
3
4
Name
Order
Citations
PageRank
Vasileios G. Ntinas1166.78
Alon Ascoli226937.82
Ronald Tetzlaff318142.07
Sirakoulis Georgios Ch.430660.41