Name
Title | ||
|---|---|---|
Device Technologies of GaN-on-Si for Power Electronics: Enhancement-Mode Hybrid MOS-HFET and Lateral Diode. |
Abstract | ||
|---|---|---|
In this paper, a high performance enhancement-mode (E-mode) Al2O3/GaN hybrid MOS-HFET and a novel AlGaN/GaN lateral diode are experimentally demonstrated. Based on the proposed approach to engineer the dielectric/GaN positive interface fixed charges (Qit+) by postdielectric annealing, the E-mode metal-oxide-semiconductor heterojunction field-effect transistor (MOS-HFET) obtains a better tradeoff b... |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/TIE.2017.2652373 | IEEE Transactions on Industrial Electronics |
Keywords | Field | DocType |
Gallium nitride,Aluminum gallium nitride,Wide band gap semiconductors,Logic gates,Silicon,Hybrid power systems,Fabrication | Gallium nitride,Reverse leakage current,Power semiconductor device,Diode,Power electronics,Engineering,Transistor,Optoelectronics,Threshold voltage,Gate driver | Journal |
Volume | Issue | ISSN |
64 | 11 | 0278-0046 |
Citations | PageRank | References |
0 | 0.34 | 2 |
Authors | ||
6 | ||