Name
Title | ||
|---|---|---|
Innovative conception of SiC MOSFET-Schottky 3D power inverter module with double side cooling and stacking using silver sintering. |
Abstract | ||
|---|---|---|
In this paper, authors developed an innovative packaging for a power inverter SiC MOSFET-Schottky. The design, composed by 6 SiC-MOSFET and 6 SiC-Schottky diodes, places dice between 2 direct-bonding-copper substrates, it was optimized to equilibrate thermal repartition on the two DBC surfaces. We purpose to increase thermal dissipation of power modules by the use of two water-cooling blocks disposed on top and on the bottom of our power inverter; it permits to use both sides of power module to dissipate heat flux. According to Finite Element Method simulations performed with ANSYS®, double side cooling permits to enhance by up to two times thermal dissipation. Moreover solders are replaced by silver sintering and wire-bonds are suppressed by top substrate connections. We want to highlight that those improvements participates to increase reliability of power modules. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1016/j.microrel.2017.07.037 | Microelectronics Reliability |
Keywords | Field | DocType |
Double side cooling,Module | Thermal,Heat flux,Diode,Power module,Electronic engineering,Schottky diode,Engineering,MOSFET,Power inverter,Stacking | Journal |
Volume | ISSN | Citations |
76 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. Barrière | 1 | 0 | 0.34 |
| Alexandrine Guédon-Gracia | 2 | 4 | 4.28 |
| E. Woirgard | 3 | 54 | 14.08 |
| S. Bontemps | 4 | 3 | 1.18 |
| F. Le Henaff | 5 | 0 | 0.34 |