Name
Title | ||
|---|---|---|
Characterization Of Oxide Trap Density With The Charge Pumping Technique In Dual-Layer Gate Oxide |
Abstract | ||
|---|---|---|
In this paper, the simple multi-frequency charge pumping (CP) technique in conjunction with the tunneling model of trapped charges shows for profiling of the near-interface oxide traps in gate metal/high-k dielectric/ SiO2 interfacial layer stack structure. The methodological basis and the accurate model are introduced for analysis of measured multi-frequency CP data in dual-layer gate oxide. The whole models are derived from the fundamental physics and simplified method is introduced for extraction of the trap profile in the stacked gate dielectric from multi-frequency CP curves. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1587/elex.14.20170141 | IEICE ELECTRONICS EXPRESS |
Keywords | Field | DocType |
oxide traps, high-k, HfO2, charge pumping | Charge pumping,Oxide,Computer science,Optics,Time-dependent gate oxide breakdown,Trap density,High-κ dielectric,Gate oxide,Optoelectronics | Journal |
Volume | Issue | ISSN |
14 | 8 | 1349-2543 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Younghwan Son | 1 | 0 | 0.34 |
| Yoon Kim | 2 | 0 | 1.69 |
| Myounggon Kang | 3 | 9 | 5.59 |