Name
Title | ||
|---|---|---|
Asynchronous 1R-1W dual-port SRAM by using single-port SRAM in 28nm UTBB-FDSOI technology |
Abstract | ||
|---|---|---|
With the advancement in technology nodes, the number of components operating in different clock domains in a System on Chip (SoC) increases. Asynchronous multi-port memory with dedicated write and read ports is used to allow data to cross clock domain boundaries. The dual-port memory architecture introduced in this paper, is based on the Single-Port SRAM (SP-SRAM) that can be generated in larger capacities with better performance statistics compared to the Dual-Port SRAM (DP-SRAM). The proposed design has been evaluated by comparing existing dual-port 1R-1W and 2RW designs in 28nm Ultra Thin Body and Box Fully Depleted Silicon on Insulator (UTBB-FDSOI) technology. A memory with a capacity of 2048 words with 64 bits, shows 15%, 35%, 28% and 4.5% improvement in read power, write power, read-write power consumption and performance respectively over conventional 1R-1W DP-SRAM with equal area. The synthesis with area optimizations applied instead, shows an area advantage of 50% over conventional 1R-1W DP-SRAM, but with a degradation in performance. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/SOCC.2017.8225994 | 2017 30th IEEE International System-on-Chip Conference (SOCC) |
Keywords | Field | DocType |
clock domain boundaries,dual-port memory architecture,SP-SRAM,Insulator technology,conventional 1R-1W DP-SRAM,single-port SRAM,asynchronous multiport memory,UTBB-FDSOI technology,asynchronous 1R-1W dual-port SRAM,system on chip,write-read ports,dual-port 1R-1W-2RW designs,ultra thin body-box fully depleted silicon on insulator,read-write power consumption,size 28.0 nm,word length 64.0 bit,Si | Silicon on insulator,Asynchronous communication,Synchronization,System on a chip,Computer science,Static random-access memory,Memory management,Time-division multiplexing,Computer hardware,Memory architecture | Conference |
ISBN | Citations | PageRank |
978-1-5386-4035-7 | 0 | 0.34 |
References | Authors | |
4 | 3 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Harsh Rawat | 1 | 2 | 1.10 |
| K. Bharath | 2 | 0 | 0.68 |
| Alexander Fell | 3 | 66 | 8.66 |