Name
Title | ||
|---|---|---|
Development and characterization of TaN thin film resistor with CMOS compatible fabrication process |
Abstract | ||
|---|---|---|
Polysilicon is the commonly used material for resistor device in standard CMOS technology. Due to the process limitation, polysilicon resistor has the problem of high resistance variation and high temperature coefficient of resistance (TCR), which may cause performance degradation in analog circuit design. In this work, high resistivity TaN metal film was developed and integrated in thin TaN metal resistor structure, which was fabricated on 200mm wafer CMOS Cu-BEOL. The metal resistor performance was evaluated to check its potential value in CMOS resistor device application. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/ASICON.2017.8252436 | 2017 IEEE 12th International Conference on ASIC (ASICON) |
Keywords | Field | DocType |
TaN Thin Film Resistor,Sheet Resistance,TCR | Cmos compatible,Wafer,Conductivity,Computer science,Temperature coefficient,CMOS,Electronic engineering,Resistor,Thin film,Optoelectronics,Fabrication | Conference |
ISSN | ISBN | Citations |
2162-7541 | 978-1-5090-6626-1 | 0 |
PageRank | References | Authors |
0.34 | 0 | 12 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Xiaoxu Kang | 1 | 23 | 5.52 |
| Li-min Zhu | 2 | 8 | 2.69 |
| Xingwang Zhu | 3 | 0 | 0.34 |
| Qingyun Zuo | 4 | 4 | 2.43 |
| Xiaolan Zhong | 5 | 0 | 0.34 |
| Shoumian Chen | 6 | 0 | 1.69 |
| Yuhang Zhao | 7 | 158 | 26.09 |
| Shanshan Liu | 8 | 11 | 5.30 |
| Hanwei Lu | 9 | 3 | 0.79 |
| Jian-Min Wang | 10 | 8 | 4.75 |
| Wei Wang | 11 | 1474 | 152.25 |
| Limin Zhu | 12 | 180 | 35.43 |