Paper Info
Title
Hausdorff Distance Driven L-Shape Matching Based Layout Decomposition for E-Beam Lithography.
Abstract
Layout decomposition is a basic step in mask data preparation in e-beam lithography (EBL) writing. For larger throughput in EBL, L-shapewriting technique has recently been developed. It is termed as L-shape fracturing, similar in line with rectangular fracturing. However, implementation of this new technique may yield very thin/narrow features called slivers. For better manufacturability, it is preferable to minimize the overall sliver length. In this paper we propose a novel scheme based on Hausdorff distance metrics for L-shape fracturing with inherent sliver minimization. The proposed scheme starts with finding the concave corner vertices of input layout, and attempts to find a balanced partition of this set of concave corner points of the given layout. Subsequently, Hausdorff distance-based layout fracturing is performed. Experimental results demonstrate efficacy of our proposed algorithm.
Year
DOI
Venue
2017
10.1007/978-981-10-7470-7_29
Communications in Computer and Information Science
Keywords
Field
DocType
Layout decomposition,L-shape fracturing,Sliver minimization mechanism,Hausdorff distance metrics,E-Beam lithography
Vertex (geometry),Computer science,Algorithm,Electronic engineering,Lithography,Minification,Hausdorff distance,Throughput,Electron-beam lithography,Design for manufacturability,Mask data preparation
Conference
Volume
ISSN
Citations 
711
1865-0929
0
PageRank 
References 
Authors
0.34
4
3
Name
Order
Citations
PageRank
Arindam Sinharay100.68
Pranab Roy24714.15
Hafizur Rahaman336891.37