Name
Title | ||
|---|---|---|
A 130nm 1Mb HfOx embedded RRAM macro using self-adaptive peripheral circuit system techniques for 1.6X work temperature range |
Abstract | ||
|---|---|---|
This paper designed a 1-Mb HfO
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-based embedded Resistive Random Access Memory (RRAM) device with a one-transistor-one-resistor (1T1R) structure, and systematically investigated its working temperature range. It noted that this embedded RRAM macro has a 1.6X working temperature range than previous design for some extreme environment. Using the peripheral-assisted technique, it can enable the error rate of the RRAM macro under 0.5% which can reduce the complexity of ECC function. Experimental results show that, the RRAM macro achieves a wider work temperature range (between -55°C and 150°C), which improves the reliability of the entire embedded RRAM macro and has a high robustness as well. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/ASSCC.2017.8240244 | 2017 IEEE Asian Solid-State Circuits Conference (A-SSCC) |
Keywords | Field | DocType |
RRAM macro,Reliability,Self-adaptive Write Circuit,Self-adaptive Sensing,Work Temperature Range | Hafnium compounds,Atmospheric temperature range,Computer science,Word error rate,Electronic engineering,Robustness (computer science),Self adaptive,Macro,Temperature measurement,Resistive random-access memory | Conference |
ISBN | Citations | PageRank |
978-1-5386-3179-9 | 0 | 0.34 |
References | Authors | |
0 | 12 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Feng Zhang | 1 | 2 | 3.15 |
| Dongyu Fan | 2 | 0 | 0.68 |
| Yuan Duan | 3 | 0 | 0.34 |
| Jin Li | 4 | 61 | 25.54 |
| Cong Fang | 5 | 17 | 7.14 |
| Yun Li | 6 | 443 | 53.24 |
| Xiaowei Han | 7 | 0 | 0.68 |
| Lan Dai | 8 | 0 | 0.34 |
| Cheng-Ying Chen | 9 | 2 | 2.42 |
| J. -S. Bi | 10 | 3 | 3.10 |
| Ming Liu | 11 | 3 | 1.51 |
| mengfan chang | 12 | 62 | 14.41 |