Title
Improvement of two-step write scheme in complementary resistive switch array.
Abstract
In this study, an improvement for two-step write scheme to reduce the resistance change in complementary resistive switch array is proposed. The authors change the amplitudes of write voltages and improve the scheme to three-step write. The disadvantages of the previous two-step write scheme are analysed. Compared with the traditional write scheme, the improved scheme can reduce resistance change ...
Year
DOI
Venue
2018
10.1049/iet-cds.2016.0432
IET Circuits, Devices & Systems
Keywords
Field
DocType
memristors
Resistive touchscreen,Voltage,Electronic engineering,Mathematics,Crossover switch,Power consumption
Journal
Volume
Issue
ISSN
12
1
1751-858X
Citations 
PageRank 
References 
0
0.34
15
Authors
5
Name
Order
Citations
PageRank
Xiaoping Wang16715.51
Ran Yang2919.74
Zhigang Zeng33962234.23
Qiao Chen441.53
Shuangyu Zhu500.34