Abstract | ||
---|---|---|
In this study, an improvement for two-step write scheme to reduce the resistance change in complementary resistive switch array is proposed. The authors change the amplitudes of write voltages and improve the scheme to three-step write. The disadvantages of the previous two-step write scheme are analysed. Compared with the traditional write scheme, the improved scheme can reduce resistance change ... |
Year | DOI | Venue |
---|---|---|
2018 | 10.1049/iet-cds.2016.0432 | IET Circuits, Devices & Systems |
Keywords | Field | DocType |
memristors | Resistive touchscreen,Voltage,Electronic engineering,Mathematics,Crossover switch,Power consumption | Journal |
Volume | Issue | ISSN |
12 | 1 | 1751-858X |
Citations | PageRank | References |
0 | 0.34 | 15 |
Authors | ||
5 |
Name | Order | Citations | PageRank |
---|---|---|---|
Xiaoping Wang | 1 | 67 | 15.51 |
Ran Yang | 2 | 91 | 9.74 |
Zhigang Zeng | 3 | 3962 | 234.23 |
Qiao Chen | 4 | 4 | 1.53 |
Shuangyu Zhu | 5 | 0 | 0.34 |