Name
Abstract | ||
|---|---|---|
We report on the first SbTe phase-change material RF switches with a refractory TiW heater in a planar configuration. With the planar layout and heater reliability, a record switching cycle endurance of >300K was demonstrated. With on-state resistance of 0.5 ohm*mm and off-state capacitance of 75 fF/mm, the RF switch figure-of-merit (FOM) is 4.1 THz, which is 6-7 times better than state-of-the-art RF switches, including RF silicon-on-insulator technology. With further layout optimization, SbTe phase-change material RF switches could be a potential candidate for future RF switch technology. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/RWS.2018.8304995 | 2018 IEEE Radio and Wireless Symposium (RWS) |
Keywords | Field | DocType |
RF switches,phase-change material,wireless communications,reliability,power handling,insertion loss | Wireless,Capacitance,Planar,Terahertz radiation,Phase-change material,RF switch,Insertion loss,Optoelectronics,Switching cycle,Materials science | Conference |
ISSN | ISBN | Citations |
2164-2958 | 978-1-5386-0711-4 | 0 |
PageRank | References | Authors |
0.34 | 0 | 7 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Jeong-sun Moon | 1 | 0 | 0.34 |
| Hwa-change Seo | 2 | 0 | 0.34 |
| Kyung-ah Son | 3 | 0 | 0.34 |
| Kangmu Lee | 4 | 0 | 0.34 |
| Daniel Zehnder | 5 | 0 | 0.34 |
| Haw Tai | 6 | 0 | 0.34 |
| Dustin Le | 7 | 0 | 0.34 |