Name
Title | ||
|---|---|---|
A 4-Transistor nMOS-Only Logic-Compatible Gain-Cell Embedded DRAM With Over 1.6-ms Retention Time at 700 mV in 28-nm FD-SOI. |
Abstract | ||
|---|---|---|
Gain-cell embedded DRAM (GC-eDRAM) is a possible alternative to traditional static random access memories (SRAM). While GC-eDRAM provides high-density, low-leakage, low-voltage, and inherent2-ported operation, its limited retention time requires periodic, power-hungry refresh cycles. This drawback is further aggravated at scaled technologies, where increased subthreshold leakage currents and decre... |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/TCSI.2017.2747087 | IEEE Transactions on Circuits and Systems I: Regular Papers |
Keywords | Field | DocType |
Microprocessors,Random access memory,Transistors,Capacitance,MOS devices,Arrays | Silicon on insulator,Dram,NMOS logic,Data retention,Static random-access memory,Electronic engineering,Subthreshold conduction,Transistor,Mathematics,Random access | Journal |
Volume | Issue | ISSN |
65 | 4 | 1549-8328 |
Citations | PageRank | References |
4 | 0.58 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Robert Giterman | 1 | 40 | 9.55 |
| Alexander Fish | 2 | 64 | 7.48 |
| A. Burg | 3 | 1426 | 126.54 |
| Adam Teman | 4 | 129 | 19.12 |