Title
A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology.
Abstract
Gallium nitride (GaN) and its alloys are becoming preferred materials for ultraviolet (UV) detectors due to their wide bandgap and tailorable out-of-band cutoff from 3.4 eV to 6.2 eV. GaN based avalanche photodiodes (APDs) are particularly suitable for their high photon sensitivity and quantum efficiency in the UV region and for their inherent insensitivity to visible wavelengths. Challenges exist however for practical utilization. With growing interests in such photodetectors, hybrid readout solutions are becoming prevalent with CMOS technology being adopted for its maturity, scalability, and reliability. In this paper, we describe our approach to combine GaN APDs with a CMOS readout circuit, comprising of a linear array of 1 x 8 capacitive transimpedance amplifiers (CTIAs), implemented in a 0.35 mu m high voltage CMOS technology. Further, we present a simple, yet sustainable circuit technique to allow operation of APDs under high reverse biases, up to approximate to 80 V with verified measurement results. The readout offers a conversion gain of 0.43 mu V/e(-), obtaining avalanche gains up to 10(3). Several parameters of the CTIA are discussed followed by a perspective on possible hybridization, exploiting the advantages of a 3D-stacked technology.
Year
DOI
Venue
2018
10.3390/s18020449
SENSORS
Keywords
Field
DocType
Gallium nitride (GaN),avalanche photodiodes (APDs),UV imaging,CMOS technology,capacitive transimepdance amplifier (CTIA),hybridization,3D integration
Gallium nitride,Avalanche photodiode,APDS,Electronic engineering,Photodetector,CMOS,Transimpedance amplifier,Engineering,High voltage,Optoelectronics,Amplifier
Journal
Volume
Issue
ISSN
18
2.0
1424-8220
Citations 
PageRank 
References 
0
0.34
4
Authors
6
Name
Order
Citations
PageRank
Preethi Padmanabhan192.08
Bruce Hancock211.09
Shouleh Nikzad310.75
L. Douglas Bell410.75
Kees Kroep500.34
Edoardo Charbon638574.69