Title
A 0.18-Mu M Cmos Time-Domain Capacitive-Sensor Interface For Sub-1mg Mems Accelerometers
Abstract
A high-resolution capacitive-sensor interface for sub-1mG MEMS accelerometers is presented herein. A time-domain capacitive-sensor interface based on a relaxation oscillator with noise reduction is proposed to achieve a high resolution. A prototype interface is fabricated using a 0.18-mu m CMOS process. The prototype is linked with a sub-1mG MEMS accelerometer, and its performance is investigated experimentally. The results confirm that the proposed interface is able to detect sub-1mG acceleration with a signal-to-noise ratio of 90.3 dB (an acceleration noise-floor of 9.0 mu G/root Hz with a bandwidth of 12 Hz).
Year
DOI
Venue
2018
10.1587/elex.15.20171227
IEICE ELECTRONICS EXPRESS
Keywords
Field
DocType
time domain, capacitive-sensor interface, relaxation oscillator, sub-1mG, microelectromechanical systems (MEMS), accelerometer
Time domain,Relaxation oscillator,Microelectromechanical systems,Computer science,Accelerometer,CMOS,Capacitive sensing,Electronic engineering,Optoelectronics
Journal
Volume
Issue
ISSN
15
2
1349-2543
Citations 
PageRank 
References 
0
0.34
6
Authors
8
Name
Order
Citations
PageRank
Motohiro Takayasu100.68
Shiro Dosho212320.68
Hiroyuki Ito33712.29
Daisuke Yamane454.53
Toshifumi Konishi501.01
Katsuyuki Machida6186.81
Noboru Ishihara7208.48
Kazuya Masu812036.37