Name
Abstract | ||
|---|---|---|
This paper describes a highly linear InGaP/GaAs HBT power amplifier (PA) for LTE band 7 applications. By optimizing a bias point of the power stage and the driver stage and adjusting sweet-spot point of IMD3, the linearity of the PA can be improved. By the measurement results, the level of ACLR is below −46 dBc up to a 23.5 dBm output power. The fabricated InGaP/GaAs HBT PA has a gain of 29.5 dB, a P1dB of 31.5 dBm, and a PAE of 36% under 5 V supply voltage. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/ISOCC.2017.8368870 | 2017 International SoC Design Conference (ISOCC) |
Keywords | Field | DocType |
HBT,linearity,power amplifier,ACLR,small cell,femtocell,base station | Computer science,Linearity,IMD3,Voltage,Electronic engineering,dBc,Heterojunction bipolar transistor,Hbt power amplifier,dBm,Optoelectronics,Electricity generation | Conference |
ISSN | ISBN | Citations |
2163-9612 | 978-1-5386-2286-5 | 0 |
PageRank | References | Authors |
0.34 | 0 | 7 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hui Dong Lee | 1 | 2 | 2.50 |
| Cheol Ho Kim | 2 | 0 | 0.34 |
| Sunwoo Kong | 3 | 0 | 0.68 |
| Seunghyun Jang | 4 | 2 | 1.06 |
| Kwang Seon Kim | 5 | 0 | 0.34 |
| Myung-Don Kim | 6 | 1 | 0.70 |
| Bong-hyuk Park | 7 | 1 | 4.74 |