Name
Title | ||
|---|---|---|
Minimum-Hard-Switching-Number Modulation Method for High-Frequency SiC-Based Impedance-Source Inverters. |
Abstract | ||
|---|---|---|
This paper discusses switching performance and power losses of silicon carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors in a high-frequency quasi-Z-source inverter operating at unity power factor. Basic types of switching processes are distinguished and precisely analyzed. Necessity for using deadtime in impedance-source converters is explained. Shoot-through states with one, two, ... |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/TIE.2018.2793244 | IEEE Transactions on Industrial Electronics |
Keywords | Field | DocType |
Switches,MOSFET,Silicon carbide,Modulation,Inverters,Capacitance | Inverter,Snubber,Power semiconductor device,Silicon carbide,Control theory,Power factor,Electronic engineering,Three-phase,Engineering,High voltage,MOSFET | Journal |
Volume | Issue | ISSN |
65 | 10 | 0278-0046 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Kornel Wolski | 1 | 0 | 0.34 |
| Piotr Majtczak | 2 | 0 | 0.68 |
| Rabkowski, J. | 3 | 9 | 2.39 |