Title
Waveguide Butt-Joint Germanium Photodetector With Lateral Pin Structure For 1600nm Wavelengths Receiving
Abstract
We report good responsivity at the wavelength of 1600nm in a Ge photodetector which had lateral p-i-n structure and butt-joint coupling structure based on conventional normal complementary metal oxide semiconductor processes. We experimentally verified the responsivity of 0.82A/W and 0.71A/W on the best and the worst polarizations, respectively. The butt joint lateral p-i-n structure is found to be polarization independent as compared with vertical ones. Although cut-off frequency was 2.3-2.4GHz at reverse bias 3V, clearly open eye diagram at 10Gbps was obtained with reverse bias over 12V. These results are promising as optical photodetectors to receive long wavelengths downstream signal wavelengths required for next-generation optical access network systems.
Year
DOI
Venue
2018
10.1587/transele.E101.C.409
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
Field
DocType
Ge photodetector, lateral p-i-n structure, butt-joint coupling, CMOS process
Butt joint,Germanium,Waveguide,Optics,Photodetector,Engineering,Wavelength
Journal
Volume
Issue
ISSN
E101C
6
1745-1353
Citations 
PageRank 
References 
0
0.34
0
Authors
6
Name
Order
Citations
PageRank
Hideki Ono100.34
Takasi Simoyama243.66
Shigekazu Okumura300.34
masahiko imai400.68
Hiroki Yaegashi512.32
Hironori Sasaki602.37