Name
Title | ||
|---|---|---|
Evaluation of Dynamic-Adjusting Threshold-Voltage Scheme for Low-Power FinFET Circuits |
Abstract | ||
|---|---|---|
In this paper, we report on the efforts of applying the dynamic-adjusting threshold-voltage scheme (DATS) to the design of an independent-gate (IG)-mode fin-type field-effect transistor (FinFET) circuit. DATS makes use of the intrinsic advantage of the IG-mode FinFET to adjust the threshold of the front gate with the back-gate bias adaptively according to the operating frequency. Consequently, the... |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/TVLSI.2018.2842067 | IEEE Transactions on Very Large Scale Integration (VLSI) Systems |
Keywords | Field | DocType |
FinFETs,Threshold voltage,Logic gates,Power demand,Integrated circuit modeling,Leakage currents | Logic gate,Power optimization,Operating frequency,Computer science,Electronic engineering,Circuit performance,Transistor,Electronic circuit,Threshold voltage,Power consumption | Journal |
Volume | Issue | ISSN |
26 | 10 | 1063-8210 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Wang Tian | 1 | 17 | 15.16 |
| Cui Xiaoxin | 2 | 12 | 9.82 |
| Ni Yewen | 3 | 6 | 1.88 |
| Yu Dunshan | 4 | 0 | 0.34 |
| Cui Xiaole | 5 | 21 | 15.35 |