Name
Abstract | ||
|---|---|---|
High voltage power MOSFET or IGBT requires a high-voltage gate driver. In this paper, a high voltage gate driver module to drive both the high-side and low-side switching power devices is designed. Both the total volume and parasitic inductance effects of the driver module are decreased considerably compared to the conventional approach of using two packaged single driver chips. A module package is designed and simulated. Two applications are proposed and their typical switching waveforms are simulated. |
Year | Venue | Field |
|---|---|---|
2015 | PROCEEDINGS OF 2015 IEEE 11TH INTERNATIONAL CONFERENCE ON ASIC (ASICON) | Parasitic element,Computer science,Power semiconductor device,Driver circuit,Power MOSFET,Insulated-gate bipolar transistor,Electronic engineering,Power module,High voltage,Electrical engineering,Gate driver |
DocType | ISSN | Citations |
Conference | 2162-7541 | 0 |
PageRank | References | Authors |
0.34 | 0 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Longcheng Que | 1 | 0 | 1.01 |
| Jian Lv | 2 | 0 | 1.69 |
| Simon S. Ang | 3 | 0 | 1.01 |