Paper Info
Title
Nanosecond-order fast switching and ultra-multilevel storage in lateral GeTe and Ge1Sb4Te7-based phase-change memories
Abstract
In this study, we first investigated fast switching in a lateral GeTe-based phase-change memory (PCM). The lateral device with a top conducting layer exhibited a good performance. The operation characteristics of the GeTe-based lateral PCM device showed that it can be operated even when 5-ns voltage pulses were applied, which was much faster than any other lateral PCM device reported. On the other hand, Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> Sb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> Te <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sub> was then adopted as the storage media for ultra-multiple resistance levels. The ultra-multi 23 resistance levels in Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> Sb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> Te <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sub> lateral phase-change memory device were demonstrated by controlling the maximum sweeping currents. The cycling of the 6 multi resistance levels, distinguishable from each other, were also demonstrated. This study indicated that Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> Sb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> Te <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sub> is a media suitable for stable ultra-multilevel storage, enabling low-cost ultrahigh-density nonvolatile memory.
Year
DOI
Venue
2015
10.1109/ASICON.2015.7516971
2015 IEEE 11th International Conference on ASIC (ASICON)
Keywords
Field
DocType
nanosecond-order fast switching,ultramultilevel storage,lateral-based phase-change memory,top conducting layer,lateral PCM device,ultramultiple resistance level,maximum sweeping current control,ultrahigh-density nonvolatile memory,time 5 ns,GeTe,GeSb4Te7
Phase change,Computer science,Voltage,Electronic engineering,Non-volatile memory,Nanosecond,Electrical engineering
Conference
ISSN
ISBN
Citations 
2162-7541
978-1-4799-8486-2
0
PageRank 
References 
Authors
0.34
0
2
Name
Order
Citations
PageRank
You Yin101.35
Sumio Hosaka201.35