Name
Abstract | ||
|---|---|---|
In this work, the methodology for the extraction of threshold voltage and specific current of a compact MOSFET model is extended in order to incorporate second order effects such as mobility degradation and threshold voltage dependence on channel length. As the original method, the proposed one is based on transconductance-to-current ratio characteristics and gives rise to a more accurate semi-empirical model, yet simple enough for hand calculations. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/LASCAS.2017.7948079 | 2017 IEEE 8th Latin American Symposium on Circuits & Systems (LASCAS) |
Keywords | Field | DocType |
MOSFET modeling,MOSFET characterization,CMOS analog design by hand | EKV MOSFET Model,Load modeling,Computer science,Semiconductor device modeling,Channel length modulation,Communication channel,Control engineering,Electronic engineering,Degradation (geology),MOSFET,Threshold voltage,Electrical engineering | Conference |
ISBN | Citations | PageRank |
978-1-5090-5860-0 | 1 | 0.43 |
References | Authors | |
3 | 5 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Ademir de Jesus Costa | 1 | 1 | 0.43 |
| Bruno Jambeiro Alves | 2 | 1 | 0.43 |
| Shirlene de Santana Soares | 3 | 1 | 0.77 |
| edson pinto santana | 4 | 4 | 4.10 |
| A. I. A. Cunha | 5 | 5 | 2.48 |