Name
Abstract | ||
|---|---|---|
A novel electrical model that describes the time evolution of oxide memristive devices is proposed. Starting from some considerations about the physical characteristics of the resistance change in the active layer of these devices, the traditional model based on a resistor series has been improved and extended, solving some limitations pending in the classical interpretation. The low complexity of... |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/TVLSI.2018.2823586 | IEEE Transactions on Very Large Scale Integration (VLSI) Systems |
Keywords | Field | DocType |
Resistance,Memristors,Ions,Computational modeling,Hafnium oxide,Anodes,Nonvolatile memory | Memristor,Electrical model,Computer science,Voltage,Design flow,Electronic engineering,Time evolution,Resistor,Non-volatile memory,Resistive random-access memory | Journal |
Volume | Issue | ISSN |
26 | 8 | 1063-8210 |
Citations | PageRank | References |
1 | 0.48 | 0 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Nicola Lupo | 1 | 1 | 1.16 |
| Edoardo Bonizzoni | 2 | 162 | 47.30 |
| Eduardo Pérez | 3 | 5 | 5.35 |
| Christian Wenger | 4 | 6 | 3.71 |
| Franco Maloberti | 5 | 8 | 3.87 |