Paper Info
Title
Investigation of Terahertz 3D EM Simulation on Device Modeling and A New InP HBT Dispersive Inter-Electrode Impedance Extraction Method.
Abstract
In this paper, a new 3-D electromagnetic (EM) simulation approach for heterojunction bipolar transistor (HBT) parameter extraction in terahertz band is presented. We introduce an inter-electrode impedance equivalent-circuit model with the concept of dispersive parameters and a more rigorous 3-D EM simulation parameter extraction method to avoid serious discrepancies between the simulated EM field distribution and the real EM field distribution of the device. Terahertz parasitic effects, including the EM field discretization and multi-finger device field sharing, are observed. Compared with the previous 3-D EM simulation-assisted model, the new model in this paper demonstrates better results for multi-finger indium phosphide HBTs.
Year
DOI
Venue
2018
10.1109/ACCESS.2018.2865929
IEEE ACCESS
Keywords
Field
DocType
InP HBT,terahertz band,3D EM simulation,transistor model
Discretization,Computer science,Electrical impedance,Terahertz radiation,Solid modeling,Heterojunction bipolar transistor,Optoelectronics,Electromagnetic field,Equivalent circuit,Indium phosphide,Distributed computing
Journal
Volume
ISSN
Citations 
6
2169-3536
0
PageRank 
References 
Authors
0.34
0
8
Name
Order
Citations
PageRank
Yapei Chen100.34
Yong Zhang2494.67
Yuehang Xu325.84
Yan Sun41124119.96
Wei Cheng524.25
Haiyan Lu601.01
Fei Xiao72712.04
Ruimin Xu849.05