Name
Abstract | ||
|---|---|---|
The paper summarizes the evolution of the Backside-Illuminated Multi-Collection-Gate (BSI MCG) image sensors from the proposed fundamental structure to the development of a practical ultimate-high-speed silicon image sensor. A test chip of the BSI MCG image sensor achieves the temporal resolution of 10 ns. The authors have derived the expression of the temporal resolution limit of photoelectron conversion layers. For silicon image sensors, the limit is 11.1 ps. By considering the theoretical derivation, a high-speed image sensor designed can achieve the frame rate close to the theoretical limit. However, some of the conditions conflict with performance indices other than the frame rate, such as sensitivity and crosstalk. After adjusting these trade-offs, a simple pixel model of the image sensor is designed and evaluated by simulations. The results reveal that the sensor can achieve a temporal resolution of 50 ps with the existing technology. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.3390/s18082407 | SENSORS |
Keywords | Field | DocType |
image sensor,high-speed,multi-collection-gate,backside-illuminated,BSI,MCG | Image sensor,Electronic engineering,Engineering | Journal |
Volume | Issue | Citations |
18 | 8.0 | 0 |
PageRank | References | Authors |
0.34 | 3 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Anh Quang Nguyen | 1 | 0 | 1.69 |
| Son Dao Vu Truong | 2 | 0 | 0.34 |
| Kazuhiro Shimonomura | 3 | 57 | 13.11 |
| Kohsei Takehara | 4 | 7 | 3.53 |
| Takeharu G. Etoh | 5 | 3 | 1.91 |