Title
Extraction And Verification Of The Small-Signal Model For Inp Dhbts In The 0.2-325 Ghz Frequency Range
Abstract
This study presents the extraction and verification of a small-signal model suitable for characterizing THz InP double heterojunction bipolar transistors (DHBTs). The pi-type topology is adopted in the intrinsic model. Capacitances C-cx and C-ce are used to characterize the capacitive parasitics caused by the routing line connecting the collector terminal, base terminal and emitter terminal, respectively. The inductive parasitics introduced by the routing line are also considered. The initial values of the model parameters are extracted using a direct extraction method. The model and extraction method for the model parameters are verified by adopting an InP DHBT with 1 emitter finger and an emitter size of 0.5 mu m x 5 mu m. The simulation results correspond with the measured results in the frequency range from 200 MHz to 325 GHz.
Year
DOI
Venue
2018
10.1587/elex.15.20180244
IEICE ELECTRONICS EXPRESS
Keywords
Field
DocType
InP DHBTs, small-signal model, extraction, verification
Computer science,Electronic engineering,Small-signal model
Journal
Volume
Issue
ISSN
15
13
1349-2543
Citations 
PageRank 
References 
0
0.34
0
Authors
7
Name
Order
Citations
PageRank
Wenyong Zhou100.34
lingling2134.34
Jun Liu392.87
Zhanfei Chen400.34
Guodong Su500.68
Wei Cheng624.25
Haiyan Lu700.34