Name
Abstract | ||
|---|---|---|
The Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) has been identified, by the International Technology Roadmap for Semiconductors (ITRS), as one of the most promising emerging technology. Different works handled the retention and reliability of STT-MRAM. However, to the best of our knowledge, the impact of a pulsed laser beam on STT-MRAM reliability and security has not been investigated so far as proposed in this paper. Since STT-MRAM are Back-end Of Line devices, we exposed the bit cells from the front-side to a 1064 nm wavelength laser pulse. The devices are electrically characterized (switching conditions between the two logical states) before and after the laser irradiation. The main result of this study is the demonstration of a resistance switching from Anti-Parallel (AP) to Parallel (P) state after the laser irradiation. That is how data integrity was altered by this irradiation, flipping the bit stored in this memory. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/IOLTS.2018.8474088 | 2018 IEEE 24th International Symposium on On-Line Testing And Robust System Design (IOLTS) |
Keywords | Field | DocType |
STT-MRAM,electrical characterization,Laser attack,irradiation,resistance switching,data integrity | Semiconductor laser theory,Computer science,Irradiation,Magnetoresistive random-access memory,Laser,International Technology Roadmap for Semiconductors,Electronic engineering,Data integrity,Spin-transfer torque,Optoelectronics,Random access | Conference |
ISBN | Citations | PageRank |
978-1-5386-5993-9 | 1 | 0.36 |
References | Authors | |
0 | 9 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. Kharbouche-Harrari | 1 | 1 | 0.36 |
| Jérémy Postel-Pellerin | 2 | 2 | 2.74 |
| Gregory di Pendina | 3 | 1 | 0.36 |
| Romain Wacquez | 4 | 1 | 0.36 |
| Driss Aboulkassimi | 5 | 3 | 1.39 |
| Marc Bocquet | 6 | 59 | 13.17 |
| R. Sousa | 7 | 1 | 0.36 |
| R. Delattre | 8 | 1 | 0.36 |
| Jean Michel Portal | 9 | 154 | 25.81 |