Title
A 50V, 1.45ns, 4.1pJ High-Speed Low-Power Level Shifter for High-Voltage DCDC Converters.
Abstract
The level shifter and the floating gate supply for high-side transistors are a major challenge in high-voltage DCDC converters. This paper presents a high-speed and power-efficient level shifter for voltages of up to 50 V, suitable for both PMOS and NMOS power FETs. A switching node falling edge detection allows both, a sensitive and safe signal detection. This enables a robust operation during steep dv/dt transitions and a power consumption as low as 4.1 pJ per switching cycle, which is a reduction of more than 40 % compared to prior art. An active clamping circuit prevents common mode displacement currents into the high-side supply. The level shifter is implemented in a 180 nm BiCMOS technology. Measurements confirm a 50 V 120 MHz high-speed operation of the level shifter with a rising/falling propagation delay of 1.45 ns/13 ns, respectively. The dv/dt robustness has been confirmed by measurements for transitions up to 6 V/ns.
Year
Venue
Keywords
2018
Proceedings of the European Solid-State Circuits Conference
high-voltage level shifter,DCDC power converter,high-speed,low power
Field
DocType
ISSN
Logic gate,NMOS logic,Computer science,Electronic engineering,Common-mode signal,Logic level,High voltage,Signal edge,PMOS logic,Electrical engineering,Clamper
Conference
1930-8833
Citations 
PageRank 
References 
0
0.34
0
Authors
3
Name
Order
Citations
PageRank
Daniel Lutz151.26
Achim Seidel272.99
Bernhard Wicht3199.30