Title
A D-Band Amplifier in 65 nm Bulk CMOS for Short-Distance Data Center Communication.
Abstract
A novel pole-tuning technique with T-type network for interstage bandwidth extension is proposed in this paper. By exploiting the proposed technique in interstage of amplifiers, the transfer function of each stage exhibits two dominant poles, achieving a flat gain-frequency response over an ultrawide bandwidth. For verification, a four-stage amplifier based on the pole-tuning technique with T-type network has been designed and implemented in a 65-nm bulk CMOS technology. The fabricated prototype achieves a peak gain of 9.5 dB at 122 GHz with a 3-dB bandwidth of more than 26 GHz and a fractional bandwidth of larger than 21.3%, while consuming a dc power of 62 mW. At the operating frequency of 125 GHz, the saturation output power and the output P-1 dB are 8.6 and 4.6 dBm, respectively. The chip occupies a small silicon area of 0.27 mm(2) including all testing pads with a core size of only 0.105 mm(2). The proposed amplifier is suitable for short-distance data center communication as one of the key building blocks.
Year
DOI
Venue
2018
10.1109/ACCESS.2018.2871047
IEEE ACCESS
Keywords
Field
DocType
CMOS,millimeter-wave (mm-wave),broadband amplifiers,bandwidth extension,T-type network,pole-tuning
D band,Frequency response,Computer science,Bandwidth extension,Computer network,Inductor,Chip,CMOS,Bandwidth (signal processing),Electrical engineering,Amplifier
Journal
Volume
ISSN
Citations 
6
2169-3536
0
PageRank 
References 
Authors
0.34
0
8
Name
Order
Citations
PageRank
jiang luo102.37
jin he2279.41
Guangyin Feng355.56
Alit Apriyana401.69
Ya Fang500.68
Zhe Xue67214.60
Qijun Huang72910.27
Hao Yu839555.62