Name
Title | ||
|---|---|---|
Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. |
Abstract | ||
|---|---|---|
On-wafer short term step-stress tests were carried out to evaluate InAlGaN/GaN HEMT devices. Three types of transistor were studied, each one having a specific two dielectric layer passivation. The results of these tests demonstrate that the upper layer of the passivation has a strong impact on the ageing of the devices. When the upper layer is an Al2O3 Atomic Layer Deposited one, the transistors show a better stability of their electrical parameters than those passivated with the other stacks. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1016/j.microrel.2018.07.142 | Microelectronics Reliability |
Keywords | Field | DocType |
GaN-based HEMT,Wafer level reliability,DC step-stress,HTRB,HTOL | Stack (abstract data type),Robustness (computer science),Electronic engineering,Dielectric layer,Engineering,Transistor,High-electron-mobility transistor,Passivation,Optoelectronics | Journal |
Volume | ISSN | Citations |
88 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 0 | 13 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. Oualli | 1 | 9 | 3.25 |
| Christian Dua | 2 | 0 | 1.01 |
| O. Patard | 3 | 0 | 0.68 |
| P. Altuntas | 4 | 0 | 0.68 |
| S. Piotrowicz | 5 | 0 | 0.34 |
| Piero Gamarra | 6 | 0 | 0.34 |
| C. Lacam | 7 | 0 | 0.34 |
| J.-C. Jacquet | 8 | 0 | 0.34 |
| L. Teisseire | 9 | 0 | 0.34 |
| D. Lancereau | 10 | 0 | 0.34 |
| E. Chartier | 11 | 0 | 0.34 |
| C. Potier | 12 | 0 | 0.34 |
| Sylvain L. Delage | 13 | 2 | 2.39 |