Name
Abstract | ||
|---|---|---|
This paper presents a study of High Power Electromagnetics (HPEM) stress effects on a GaAs (Gallium Arsenide) low-noise amplifier (LNA). This work aims to evaluate such electrical stress effect from circuit to component scale in relation to more general Intentional electromagnetic interference (IEMI) studies. Conducted susceptibility measurements were made on a specifically designed device under test (DUT). Those experiments yielded interesting results concerning exposition of the DUT to destructive values of interference power, as well as its response to non-destructive but significant powers. The destruction process has been analyzed using time-domain and frequency-domain measurements. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1016/j.microrel.2018.07.108 | MICROELECTRONICS RELIABILITY |
Keywords | Field | DocType |
IEMI,HPEM,HEMT,pHEMT,Vulnerability,Susceptibility,EMC,Radiofrequency,LNA | Gallium arsenide,Stress effects,Low-noise amplifier,Device under test,Electromagnetics,Electromagnetic interference,Electronic engineering,Interference (wave propagation),Engineering,Amplifier | Journal |
Volume | ISSN | Citations |
88-90 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 1 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. Girard | 1 | 0 | 0.34 |
| Tristan Dubois | 2 | 0 | 0.34 |
| P. Hoffmann | 3 | 0 | 0.34 |
| Geneviève Duchamp | 4 | 12 | 5.38 |