Paper Info
Title
Write and Read Frequency-Based Word-Line Batch VTH Modulation for 2-D and 3-D-TLC NAND Flash Memories.
Abstract
As a comprehensive solution based on the data access frequency, this paper proposes word-line batch $V_{mathrm {TH}}$ modulation (WBVM) to improve the reliability of 2-D and 3-D-triple-level-cell (TLC) nand flash memories. Proposed WBVM modulates the threshold voltage ( $V_{mathrm {TH}}$ ) distribution and decreases errors of frequently written/erased “write-hot data,” infrequently written or read “write- and read-cold data,” and frequently read “read-hot data.” For write-hot data, the proposed WBVM $V_{mathrm {TH}}$ score modulation suppresses the degradation of the tunnel oxide, which is caused by programming higher $V_{mathrm {TH}}$ state. On the other hand, for write- and read-cold and read-hot data, the proposed WBVM bit error rate (BER) score modulation reduces errors during data retention and read cycles. Moreover, for archive memory, the proposed BER score nLC-modulation achieves the higher reliability by expanding the read margin of the least reliable $V_{mathrm {TH}}$ state. As a result, the proposed WBVM realizes the comprehensive reliability enhancement for write-hot, write- and read-cold, and read-hot data of 2-D and 3-D-TLC nand flash. WBVM extends the acceptable write/erase cycles, the acceptable data-retention time, and the acceptable read cycles by up to 1.8 $times$ , 45 $times$ , and 4.7 $times$ , respectively.
Year
DOI
Venue
2018
10.1109/jssc.2018.2852748
IEEE Journal of Solid-state Circuits
Field
DocType
Volume
Discrete mathematics,Data retention,Computer science,Measurement uncertainty,NAND gate,Electronic engineering,Modulation,Frequency modulation,Threshold voltage,Bit error rate
Journal
53
Issue
Citations 
PageRank 
10
0
0.34
References 
Authors
0
3
Name
Order
Citations
PageRank
Yoshiaki Deguchi121.86
Shun Suzuki201.69
Ken Takeuchi3229.10