Title
A 28-nm 1R1W Two-Port 8T SRAM Macro With Screening Circuitry Against Read Disturbance and Wordline Coupling Noise Failures.
Abstract
We demonstrate a 1-read/1-write two-port (2P) embedded static random access memory macro based on 8T SRAM bitcell with an effective scheme for design of testability. To achieve a smaller macro area, a differential sense amplifier is introduced to read out the data, where the reference voltage for reading 0/1 data is generated by an unselected bitcell array. In addition, we propose a screening test...
Year
DOI
Venue
2018
10.1109/TVLSI.2018.2864267
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Keywords
Field
DocType
Random access memory,Couplings,Degradation,Timing,Logic gates,Very large scale integration,Monte Carlo methods
Sense amplifier,Logic gate,Computer science,Voltage reference,Voltage,Static random-access memory,Electronic engineering,CMOS,Macro,Very-large-scale integration
Journal
Volume
Issue
ISSN
26
11
1063-8210
Citations 
PageRank 
References 
0
0.34
0
Authors
6
Name
Order
Citations
PageRank
Makoto Yabuuchi14912.38
Yasumasa Tsukamoto211317.90
Hidehiro Fujiwara37212.67
miki tanaka4152.03
Shinji Shinji500.34
Koji Nii622344.78