Name
Title | ||
|---|---|---|
First and Second Order Piezoresistive Characteristics of CMOS FETs: Weak through Strong Inversion |
Abstract | ||
|---|---|---|
Experimental results validate a continuous model describing the stress dependencies of CMOS FETs from weak through strong inversion. The model incorporates the significant impact of threshold voltage changes (through ni
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>
) on the stress responses in all regions of operation and describes both first- and second-order longitudinal and traverse piezoresistive coefficients for PMOS and NMOS devices. Orthogonal differential pairs of MOSFETs can be utilized to directly measure the mobility component of the overall stress response. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/ESSDERC.2018.8486881 | 2018 48th European Solid-State Device Research Conference (ESSDERC) |
Keywords | Field | DocType |
CMOS FETs,continuous model,stress dependencies,threshold voltage changes,stress response,traverse piezoresistive coefficients,mobility component,MOSFETs,orthogonal differential pairs,PMOS device,NMOS devices,longitudinal piezoresistive coefficients,first order piezoresistive characteristics,second order piezoresistive characteristics | Continuous modelling,NMOS logic,Semiconductor device modeling,Electronic engineering,CMOS,PMOS logic,MOSFET,Threshold voltage,Optoelectronics,Materials science,Piezoresistive effect | Conference |
ISSN | ISBN | Citations |
1930-8876 | 978-1-5386-5402-6 | 0 |
PageRank | References | Authors |
0.34 | 2 | 2 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Richard C. Jaeger | 1 | 51 | 9.34 |
| jeffrey c suhling | 2 | 5 | 1.76 |