Name
Abstract | ||
|---|---|---|
FinFET has been introduced in the 22/16nm node to continue CMOS logic scaling. The very tight pitches foreseen for the coming generation necessitate the introduction of different scaling boosters. In this paper, we review how these elements affect the analog device performance. The benefits of alternative channel material for dedicated RF applications and the related integration challenges are also discussed. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/ESSDERC.2018.8486857 | 2018 48th European Solid-State Device Research Conference (ESSDERC) |
Keywords | Field | DocType |
analog device performance,alternative channel material,Si FinFET,CMOS logic scaling,scaling boosters,analog-RF perspective,size 22.0 nm,size 16.0 nm,Si | Gallium arsenide,Logic gate,Analog device,Communication channel,Electronic engineering,CMOS,Scaling,Materials science | Conference |
ISSN | ISBN | Citations |
1930-8876 | 978-1-5386-5402-6 | 0 |
PageRank | References | Authors |
0.34 | 0 | 14 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Bertrand Parvais | 1 | 50 | 8.58 |
| Geert Hellings | 2 | 0 | 0.68 |
| Marco Simicic | 3 | 2 | 2.20 |
| Pieter Weckx | 4 | 52 | 16.96 |
| Jérôme Mitard | 5 | 1 | 1.79 |
| Jang, D. | 6 | 5 | 1.91 |
| V. Deshpande | 7 | 0 | 0.34 |
| B. van Liempc | 8 | 0 | 0.34 |
| A. Veloso | 9 | 0 | 0.68 |
| A. Vandooren | 10 | 0 | 0.68 |
| N. Waldron | 11 | 0 | 0.68 |
| Piet Wambacq | 12 | 529 | 96.10 |
| Nadine Collaert | 13 | 7 | 3.12 |
| Diederik Verkest | 14 | 1544 | 123.76 |