Name
Abstract | ||
|---|---|---|
This paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 mu m. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier Phi(B) of similar to 673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under an applied reverse bias of 8 V. In addition, the device performance is discussed in terms of normalized noise and noise-equivalent power. The proposed devices will pave the way towards the development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate, and both operating at 1.55 mu m. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.3390/s18113755 | SENSORS |
Keywords | Field | DocType |
silicon,near-infrared,photodetectors,internal photoemission,erbium | Integrable system,Analytical chemistry,Near-infrared spectroscopy,Photodetector,Engineering,Erbium,Optoelectronics,Silicon | Journal |
Volume | Issue | ISSN |
18 | 11.0 | 1424-8220 |
Citations | PageRank | References |
0 | 0.34 | 2 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Mariano Gioffré | 1 | 0 | 0.68 |
| Giuseppe Coppola | 2 | 0 | 0.68 |
| Mario Iodice | 3 | 2 | 1.45 |
| Maurizio Casalino | 4 | 2 | 2.80 |