Title
A bulk 65nm Cortex-M0+ SoC with All-Digital Forward Body Bias for 4.3X Subthreshold Speedup
Abstract
IoT devices demand ultra-low power operation while still achieving the performance demanded by application constraints. Dynamic forward body biasing can help to achieve this by providing a speed-up during active operation without incurring a leakage penalty' during standby periods. While body biasing has been fully explored in FD-SoI technology, bulk CMOS can also benefit from efficient forward body biasing. At subthreshold voltage levels, the Low Voltage Swapped Body (LVSB) technique, in which n-well and p-well are driven to VSS and VDD respectively, helps to realize a significant speedup without incurring analog bias generation overheads. This work presents key advances to leverage LVSB, proven on a bulk 65nm subthreshold Arm Cortex-M0+ system. The system achieves a 4.3X speedup on the ULPBench benchmark at a cost of only 11% average power and 10.4% area, while showing that LVSB can be usefully applied up to 0.50V.
Year
DOI
Venue
2018
10.1109/ASSCC.2018.8579269
2018 IEEE Asian Solid-State Circuits Conference (A-SSCC)
Keywords
Field
DocType
Arm,Cortex-M0+,LVSB,subthreshold,IoT,FBB
Logic gate,Leakage (electronics),Computer science,Voltage,Electronic engineering,CMOS,Subthreshold conduction,Low voltage,Speedup,Biasing
Conference
ISBN
Citations 
PageRank 
978-1-5386-6414-8
1
0.38
References 
Authors
3
5
Name
Order
Citations
PageRank
Pranay Prabhat1244.69
Graham Knight211.39
Supreet Jeloka3416.41
Sheng Yang4746.75
James Myers5327.98